V2F05A200Y2DRP [KYOCERA AVX]
AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip; AVX多层陶瓷瞬态电压抑制器保护和EMI衰减的单芯片
| 型号： | V2F05A200Y2DRP |
| 厂家： | 
KYOCERA AVX |
| 描述： | AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip |
| 文件： | 总8页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TransFeed
AVX Multilayer Ceramic Transient Voltage Suppressors
TVS Protection and EMI Attenuation in a Single Chip
GENERAL DESCRIPTION
AVX has combined the best electrical characteristics of its
Schematic Diagram
IN
OUT
TransGuard Transient Voltage Suppressors (TVS) and its
Feedthru Capacitors into a single chip for state-of-the-art
overvoltage circuit protection and EMI reduction over a
broad range of frequencies. This unique combination of
multilayer ceramic construction in a feedthru configuration
gives the circuit designer a single 0805 chip that responds
to transient events faster than any TVS device on the mar-
ket today, and provides significant EMI attenuation when in
the off-state.
Electrical Model
IN
OUT
LS
LS
RP
RV
C
The reduction in parallel inductance, typical of the feedthru
chip construction when compared to the construction of
standard TVS or ceramic capacitor chips, gives the
TransFeed product two very important electrical advan-
tages: (1) faster “turn-on” time. Calculated response times
of <200 pSec are not unusual with this device, and mea-
sured response times range from 200 – 250 pSec. The
TransFeed “turn-on” characteristic is less than half that of
an equivalent TransGuard part — and TransGuards clamp
transient voltages faster than any other bipolar TVS solution
such as diodes; (2) the second electrical advantage of
lower parallel inductance, coupled with optimal series
inductance, is the enhanced attenuation characteristics of
the TransFeed product. Not only is there significantly
greater attenuation at a higher self-resonance frequency,
but the roll-off characteristic becomes much flatter, result-
ing in EMI filtering over a much broader frequency spec-
trum. Typical applications include filtering/protection on
Microcontroller I/O Lines, Interface I/O Lines, Power Line
Conditioning and Power Regulation.
RON
LP
TYPICAL APPLICATIONS
• Fingerprint ID Circuit
• Magnetic Field Circuit
• LCD Dashboard Driver
Where designers are concerned with both transient voltage
protection and EMI attenuation, either due to the electrical
performance of their circuits or due to required compliance
to specific EMC regulations, the TransFeed product is an
ideal choice.
HOW TO ORDER
V
2
F
1
05
A
150
Y
2
E
D
P
Varistor
Feedthru
Capacitor
Voltage
Varistor
Clamping
Voltage
150 = 18V
200 = 22V
300 = 32V
400 = 42V
500 = 50V
DC
Packaging
Code
Resistance
1 = 0.150 Ohms
2 = 0.200 Ohms
3 = 0.250 Ohms
05 = 5.6VDC
09 = 9.0VDC
14 = 14.0VDC
18 = 18.0VDC
Pcs./Reel
D = 1,000
R = 4,000
T = 10,000
Chip Size
2 = 0805
3 = 0612
No. of
Energy
Rating
X = 0.05J
A = 0.1J
C = 0.3J
Capacitance
Tolerance
Y = +100/-50%
Feedthru
Current
D = 500 mA
E = 750 mA
F = 1.0 Amp
Termination Finish
P = Ni/Sn Alloy (Plated)
M = Ni/Sn Pb (Plated)
Elements
38
TransFeed
AVX Multilayer Ceramic Transient Voltage Suppressors
TVS Protection and EMI Attenuation in a Single Chip
TRANSFEED ELECTRICAL SPECIFICATIONS (0805 CHIP SIZE)
AVX
Working Working Breakdown Clamping Maximum Transient
Peak
Current
Rating
Typical
Cap
DC
Resistance
Maximum
Feedthru
Current
Part Number
Voltage Voltage
Voltage
Voltage
Leakage
Current
Energy
Rating
(DC)
(AC)
V2F105A150Y2E _ _
V2F105C150Y1F _ _
V2F109A200Y2E _ _
V2F109C200Y1F _ _
V2F114A300Y2E _ _
V2F114C300Y1F _ _
V2F118A400Y2E _ _
V2F118C400Y1F _ _
V2F118X500Y3D _ _
V3F418A400Y3G _ _
V3F418C400Y3G _ _
5.6
4.0
8.5 20%
8.5 20%
18
18
22
22
32
32
42
42
50
42
50
35
35
25
25
15
15
10
10
10
10
10
0.10
0.30
0.10
0.30
0.10
0.30
0.10
0.30
0.05
0.10
0.05
30
120
30
800
2500
575
1800
300
900
200
500
75
0.200
0.150
0.200
0.150
0.200
0.150
0.200
0.150
0.250
0.200
0.250
0.75
1.00
0.75
1.00
0.75
1.00
0.75
1.00
0.50
0.30
0.20
5.6
9.0
4.0
6.4
12.7 15%
12.7 15%
18.5 12%
18.5 12%
25.5 10%
25.5 10%
25.5 10%
25.5 10%
25.5 10%
9.0
6.4
120
30
14.0
14.0
18.0
18.0
18.0
18.0
18.0
10.0
10.0
13.0
13.0
13.0
13.0
13.0
120
30
120
20
20
150
65
15
Termination Finish Code
Packaging Code
VW (DC) DC Working Voltage (V)
VW (AC) AC Working Voltage (V)
VB
VB Tol
VC
Typical Breakdown Voltage (V @ 1mADC)
VB Tolerance is from Typical Value
Clamping Voltage (V @ 1A 8x20µS)
IL
ET
IP
Maximum Leakage Current at the Working Voltage (µA)
Transient Energy Rating (J, 10x1000µS)
Peak Current Rating (A, 8x20µS)
Cap
DCR
IFT
Typical Capacitance (pF) @ 1MHz and 0.5 V
DC Resistance (Ohms)
Maximum Feedthru Current (A)
dB Attenuation vs Frequency
0
-10
-20
-30
-40
-50
0
TransFeed 0.1J
TransFeed 0.3J
18LC
18A
-10
-20
-30
-40
-50
18C
14C
14A
9A
9C
5C
5A
-60
-60
-70
-70
0.01
0.1
1
10
0.01
0.1
1
10
Frequency (GHz)
Frequency (GHz)
39
TransFeed
AVX Multilayer Ceramic Transient Voltage Suppressors
TVS Protection and EMI Attenuation in a Single Chip
DIMENSIONS
mm (inches)
S
L
W
T
BW
BL
EW
X
2.01 0.20
1.25 0.20
1.143 Max.
0.46 0.10
0.18 + 0.25 -0.08
0.25 0.13
1.02 0.10
0.23 0.05
0805
(0.079 0.008) (0.049 0.008) (0.045 Max.) (0.018 0.004) (0.007 + 0.010 -0.003) (0.010 0.005) (0.040 0.004) (0.009 0.002)
L
X
S
T
BW
C
L
BL
W
EW
RECOMMENDED SOLDER PAD LAYOUT (Typical Dimensions)
mm (inches)
T
P
S
W
L
C
0805
3.45 (0.136)
0.51 (0.020)
0.76 (0.030)
1.27 (0.050)
1.02 (0.040)
0.46 (0.018)
4 Pad Layout
T
P
P
W
S
INPUT
OUTPUT
C
L
40
TransFeed Array - V3F4 Series
TVS Protection and EMI Attenuation in a 4-Element Array
E
W
P
D
A
T
B
C
D
BL
L
ES
F
A
BW
V3F4
DIMENSIONS
mm (inches)
P
L
W
T
BW
BL
ES
1.60 0.20
(0.063 0.008)
3.25 0.15
(0.128 0.006)
1.22 Max.
(0.048 Max.)
0.41 0.10
(0.016 0.004)
0.18 +0.25 -0.08
(0.007 +0.010 -0.003)
0.41 0.10
(0.016 0.004)
0.76 REF
(0.030 REF)
mm (inches)
A
B
C
D
E
F
0.60 (0.024)
1.60 (0.064)
2.20 (0.088)
0.35 (0.014)
0.76 (0.030)
2.60 (0.104)
41
TransFeed
AVX Multilayer Ceramic Transient Voltage Suppressors
TVS Protection and EMI Attenuation in a Single Chip
PERFORMANCE CHARACTERISTICS
INSERTION LOSS COMPARISON
(TransFeed vs TransGuard)
0805 – dB vs Frequency
5.6V, 0.1J
VC080505A150
14V, 0.1J
VC080514A300
0
-10
-20
-30
-40
-50
-60
-70
0
-10
-20
-30
-40
-50
-60
V2F105A150Y2E
V2F114A300Y2E
0.01
0.1
Frequency (GHz)
1
10
0.01
0.1
Frequency (GHz)
1
10
18V, 0.1J
VC080518A400
18V, 0.05J
VC08LC18A500
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
-70
V2F118X500Y3D
V2F118A400Y2E
0.01
0.1
Frequency (GHz)
1
10
0.01
0.1
1
10
Frequency (GHz)
5.6V, 0.3J
14V, 0.3J
0
-10
-20
-30
-40
-50
-60
-70
0
-10
-20
-30
-40
-50
-60
-70
VC080514C300
VC080505C150
V2F105C150Y1F
V2F114C300Y1F
0.01
0.1
Frequency (GHz)
1
10
0.01
0.1
Frequency (GHz)
1
10
18V, 0.3J
0
-10
-20
-30
-40
-50
-60
-70
VC080518C400
V2F118C400Y1F
0.01
0.1
Frequency (GHz)
1
10
42
TransFeed
AVX Multilayer Ceramic Transient Voltage Suppressors
TVS Protection and EMI Attenuation in a Single Chip
PERFORMANCE CHARACTERISTICS
CURRENT vs TEMPERATURE
0805 – 0.1 Joule
30
Note:
Dashed
18V
14V
Portions
Not Guaranteed
18LC
25
20
5V
9V
0.3
0.5
0.75
1
Current (Amps)
CURRENT vs TEMPERATURE
0805 – 0.3 Joule
30
18V
25
20
14V
5V
0
0.25
0.5
0.75
1
Current (Amps)
43
TransFeed
AVX Multilayer Ceramic Transient Voltage Suppressors
TVS Protection and EMI Attenuation in a Single Chip
PERFORMANCE CHARACTERISTICS
FEEDTHRU VARISTORS
AVX Multilayer Feedthru Varistors (MLVF) are an ideal choice The electrical model for a ZnO MLV and a ZnO Feedthru MLV
for system designers with transient strike and broadband are shown below. The key difference in the model for
EMI/RFI concerns.
the Feedthru is a transformation in parallel to series induc-
tance. The added series inductance helps lower the injected
transient peak current (by 2πfL) resulting in an additional ben-
efit of a lower clamping voltage. The lowered parallel induc-
tance decreases the turn on time for the varistor to <250ps.
Feedthru Varistors utilize a ZnO varistor material and the
electrode pattern of a feedthru capacitor. This combination
allows the package advantage of the feedthru and material
advantages of the ZnO dielectric to be optimized.
ZnO MLV Feedthrus exhibit electrical and physical advantages
over standard ZnO MLVs. Among them are:
1. Faster Turn on Time
2. Broadband EMI attenuation
3. Small size (relative to discrete MLV and EMI filter schemes)
Discrete MLV Model
Discrete MLVF Model
To Device
Requiring
Protection
To Device
Requiring
Protection
PCB
Trace
LS
LS
Solder Pad
Solder Pad
LP
C
RP
RV
C
RV
RP
R
on
LP
Solder Pad
R
on
Solder Pad
Where: R
R
=
Voltage Variable resistance
(per VI curve)
1012 Ω
Where: R
=
=
Voltage Variable resistance
(per VI curve)
v
v
≥
R
Body IR
p
p
C
R
=
=
=
defined by voltage rating and energy level
turn on resistance
parallel body inductance
C
R
=
=
=
=
defined by voltage rating and energy level
turn on resistance
minimized parallel body inductance
series body inductance
on
on
L
L
L
p
p
s
44
TransFeed
AVX Multilayer Ceramic Transient Voltage Suppressors
TVS Protection and EMI Attenuation in a Single Chip
PERFORMANCE CHARACTERISTICS
APPLICATIONS
MARKET SEGMENTS
TYPICAL CIRCUITS REQUIRING
TRANSIENT VOLTAGE
PROTECTION AND EMI FILTERING
• EMI Suppression
• Broadband I/O Filtering
• Vcc Line Conditioning
• Computers
• Automotive
• Power Supplies
• Multimedia Add-On Cards
• Bar Code Scanners
• Remote Terminals
• Medical Instrumentation
• Test Equipment
• Transceivers
• Cellular Phones / Pagers
The following applications and schematic diagrams
show where TransFeed TVS/ EMI filtering devices might
be used:
FEATURES
• Small Size
• Low ESR
• Ultra-fast Response Time
• Broad S21 Characteristics
• System Board Level Interfaces: (Fig. 1)
Digital to RF
Analog to Digital
Digital to Analog
• Voltage Regulation (Fig. 2)
• Power Conversion Circuits (Fig. 3)
• GaAs FET Protection (Fig. 4)
Fig. 1 – System Interface
Fig. 2 – Voltage Regulators
REGULATOR
+
Sensor/Keyboard/
Touchscreen Input
DIGITAL
BOARD
RF BOARD
By X Bus
Fig. 3 – Power Conversion Circuits/Power Switching Circuits
+3.3V
MAIN
POWER
POWER
MANAGEMENT
CHIP
INTERFACE
CARD
+3.3V
+1.8V
Sensor Input
Display
ANALOG
BOARD
DIGITAL
BOARD
+5V
+12V
Keyboard
ASIC
DIGITAL
BOARD
ANALOG
BOARD
Fig. 4 – GaAs FET Protection
OUTPUT
INPUT
SPECIFICATION COMPARISON
MLVF
0805
PARAMETER
MLV
0805
5ph
L
L
typical
typical
typical
typical
typical
typical
N/A
s
<600nh
<1.5nh
p
<0.025Ω
R
C
R
R
<0.1Ω
on
100pf to 2.5nf
see VI curves
>0.25 x 1012Ω
<250ps
100pf to 5.5nf
see VI curves
>1 x 1012Ω
<500ps
v
p
Typical turn on time
Typical frequency response
A comparison table showing typical element parameters and resulting
performance features for MLV and MLVF is shown above.
45
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